P5N50C Datasheet Text
P5N50C
®
Pb Free Plating Product
P5N50C
5 Ampere 500 Volt N-Channel MOSFET
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Pb
Features
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RDS(on) (Max 1.5 ˟ )@VGS=10V Gate Charge (Typical 18.5nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested
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2. Drain
BVDSS = 500V
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1. Gate
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RDS(ON) = 1.5 ohm ID = 5.0A
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3. Source
General Description
This N-channel enhancement mode field-effect power transistor using Thinki Semiconductor's advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220 package is well suited for half bridge and full bridge resonant topolgy like a electronic ballast .
TO-220
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