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P5N50C - 5 Ampere 500 Volt N-Channel MOSFET

Description

This N-channel enhancement mode field-effect power transistor using Thinki Semiconductor's advanced planar stripe, DMOS technology intended for off-line switch mode power supply.

Also, especially designed to minimize rds(on) and high rugged avalanche characteristics.

Features

  • ̰ ̰ ̰ ̰ ̰ RDS(on) (Max 1.5 ˟ )@VGS=10V Gate Charge (Typical 18.5nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested ඔ 2. Drain BVDSS = 500V ̵ 1. Gate { RDS(ON) = 1.5 ohm ID = 5.0A ̻ ̻ { 3. Source General.

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Datasheet Details

Part number P5N50C
Manufacturer Thinki Semiconductor
File Size 909.31 KB
Description 5 Ampere 500 Volt N-Channel MOSFET
Datasheet download datasheet P5N50C Datasheet

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Full PDF Text Transcription

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P5N50C ® Pb Free Plating Product P5N50C 5 Ampere 500 Volt N-Channel MOSFET { ̻ Pb Features ̰ ̰ ̰ ̰ ̰ RDS(on) (Max 1.5 ˟ )@VGS=10V Gate Charge (Typical 18.5nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested ඔ 2. Drain BVDSS = 500V ̵ 1. Gate { RDS(ON) = 1.5 ohm ID = 5.0A ̻ ̻ { 3. Source General Description This N-channel enhancement mode field-effect power transistor using Thinki Semiconductor's advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220 package is well suited for half bridge and full bridge resonant topolgy like a electronic ballast .
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